Thermal stability of Hg1−xMnxTe compound semiconductors

Thermal Stability of Hg, -xMnxTe Compound Semiconductors

The thermal behaviour of Hg, -,Mn,Te single crystals is investigated by means of the RBS/channeling technique. The stoichiometry parameter x ranges from 0.08 to 0.2. An important release of Hg atoms is observed after annealing in hydrogen atmosphere at 240 "C for 10 min. Backscattering spectra for crystals with x = 0.2 revealed quite a sharp Hg edge proceeding towards greater depth with increas...

Ab initio thermal transport in compound semiconductors

We use a recently developed ab initio approach to calculate the lattice thermal conductivities of compound semiconductors. An exact numerical solution of the phonon Boltzmann transport equation is implemented, which uses harmonic and anharmonic interatomic force constants determined from density functional theory as inputs. We discuss the method for calculating the anharmonic interatomic force ...

Compound Semiconductors

Hydrogen in compound semiconductors

Hydrogen can be inadvertently introduced at any of several steps in the fabrication of optoelectronic devices. The most common consequence of hydrogenation is the passivation of dopant impurities, which leads to a decrease in the electrical conductivity of the material. The most successfully applied experimental technique for directly determining the involvement of hydrogen has been infrared-ab...

Magic alkali-fullerene compound clusters of extreme thermal stability.

The thermal stability of free pure C60-, as well as C60-alkali, and -alkaline-earth metal compound clusters is investigated. We find that small (C60)m-clusters (m<or=6) decay at comparatively low temperatures below 400 K, as a consequence of weak intermolecular van der Waals interaction. Adding barium or potassium to the clusters dramatically increases the decay temperatures for "magic" configu...